Silicon-on-insulator polarization rotating micro-ring resonator

We propose a novel micro-ring resonator which uses quasi-TE polarized light in the bus waveguide to excite the quasi-TM polarized modes in a micro-ring. An all-pass filter is demonstrated on Silicon-on-Insulator

Tunable 4-channel ultra-dense WDM demultiplexer with III-V photodiodes integrated in silicon-on-insulator

A tunable 4-channel ultra-dense WDM demultiplexer with 0.25nm channel spacing is demonstrated with III-V photodiodes integrated on Silicon-on-Insulator using rib waveguides. A possible application is an in-band label extractor for all-optical packet switching

High-performance low-loss silicon-on-insulator microring resonators using TM-polarized light

Microring resonators on SOI are investigated for both orthogonal polarizations. By demonstrating low-loss (1.94dB/cm) microring resonators with an intrinsic Q up to 340000 we proof that using TM-polarized light enables high-performance filters

In-band label extractor based on Cascaded Si ring resonators enabling 160 Gb/s optical packet switching modules

Photonic integration of optical packet switching modules is crucial to compete with existing electronic switching fabrics in large data center networks. The approach of coding the forwarding packet information in an in-band label enables a spectral-efficient and scalable way of building low-latency large port count modular optical packet switching architecture. We demonstrate the error-free operation of the four in-band label extraction from 160 Gb/s optical data packets based on photonic integrated silicon-on- insulator ring resonators. Four low-loss cascaded ring resonators using the quasi-TM mode are used as narrowband filters to ensure the detection of four optical labels as well as the error-free forwarding of the payload at limited power penalty. Due to the low-loss and less-confined optical quasi-TM mode the resonators can be very narrowband and have low insertion loss. The effect of the bandwidth of the four ring resonators on the quality of the payload is investigated. We show that using four rings with 3dB bandwidth of 21 pm and only an insertion loss of 3 dB, the distortion on the payload is limited (< 1.5 dB power penalty), even when the resonances are placed very close to the packet's central wavelength. We also investigate the optical power requirements for error-free detection of the label as function of their spectral position relative to the center of the payload. The successful in-band positioning of the labels makes this component very scalable in amount of labels

Co-integration of Ge detectors and Si modulators in an advanced Si photonics platform

A Si photonics platform is described, co-integrating advanced passive components with Si modulators and Ge detectors. This platform is developed on a 200mm CMOS toolset, compatible with a 130nm CMOS baseline. The paper describes the process flow, and describes the performance of selected electro-optical devices to demonstrate the viability of the flow